Sugimoto Noriaki | TOYOTA Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
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- TOYOTA Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japanの論文著者
TOYOTA Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan | 論文
- GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
- A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
- Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions