WATANABE Hiroshi | Advanced LSI Technology Laboratory, Toshiba Corp.
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概要
Advanced LSI Technology Laboratory, Toshiba Corp. | 論文
- Ta-based metal gates (Ta, TaB_x, TaN_x and TaC_x) : Modulated Work Function and Improved Thermal Stability
- Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
- Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO_2 Gate Dielectrics
- Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
- Dielectric Constant Behavior of Hf-O-N System