Nagashima Dai | Department of Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522, Japan
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- Department of Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522, Japanの論文著者
Department of Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522, Japan | 論文
- Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing
- Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films