Takami Tetsuya | Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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- Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japanの論文著者
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan | 論文
- X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor
- 4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
- Write Strategy Optimization Method with Two-Step Search for Blu-ray Disc Recording
- Real-Time Write Strategy Optimization Method for Optical Discs
- Oil Leakage Detection System for Plant Inspection