Hwang Junghwan | Toyota Central R&D Labs. Inc.
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概要
Toyota Central R&D Labs. Inc. | 論文
- Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy
- Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy
- Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films
- Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy
- Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy