石上 忍 | 国立研究開発法人情報通信研究機構電磁環境研究室
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概要
論文 | ランダム
- Properties of GaAs/Al_Ga_As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
- Influence of pH on the Morphology of KBr Solution Growth
- Well-Above Bandgap Transient Photoreflectance Characterization of Low-Temperature-Grown GaAs
- Spectral Dependence of Time-Resolved Photoreflectance of Low-Temperature-Grown GaAs
- Characterization and Removal of Trace Heavy Metal Contamination on Si-Surface Resulted from CHF_3/C_2F_6 Reactive Ion Etching