Matsumoto Satoshi | NTT Telecommunication Energy Laboratories
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概要
NTT Telecommunication Energy Laboratories | 論文
- A Highly-Efficient Tungsten-Polycide Gate Radio-Frequency Power Metal-Oxide-Semiconductor Field-Effect-Transistor Using Bonded Silicon-on-Insulator Technology
- Impact of Silicon-on-Insulator Substrate Parameters on the Radio Frequency Performance of Quasi-Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field Effect Transistors
- Fingerprint Identification System on a Single Chip Based on Advanced Circuit and Device Technologies