Takashima Akira | Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan | 論文
- Improvement in Electrical Properties of Carbon Nanotube Via Interconnects
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
- Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
- Characteristics of Defect Generation and Breakdown in SiO2 for Polycrystalline Silicon Channel Field-Effect Transistor
- Substrate Orientation Dependence of NiSi Silicided Junction Leakage Induced by Anisotropic Ni Migration in Crystal Si