Ohwaki Takeshi | Toyota Central Research & Development Laboratories, Inc.
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概要
論文 | ランダム
- Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- 地熱調査におけるAMT法の利点と問題点
- Characteristics of Schottky Contacts on n-InP and n-GaAs by a Novel in situ Electrochemical Process
- 含水岩石複素比抵抗への温度の影響 : 測定システムの開発