Ishigaki Isao | Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishment
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- Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishmentの論文著者
Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishment | 論文
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
- Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam