Ando Tsuyoshi | Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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- 同名の論文著者
- Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japanの論文著者
Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan | 論文
- Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen
- Estimation of Effective Band Gap Energy of CdxZn1-xS/ZnS Multiple Quantum Wells Lattice-Matched to GaP Substrates
- Reduction in Induced Strain in CdxZn1-xS Well Layers Using ZnS1-ySey Barrier Layers and Inhibition of Induced Strain due to Lattice Mismatch between MgzZn1-zS Cladding Layers and CdxZn1-xS/ZnS1-ySey Multiple Quantum Wells by Adjusting Mg Content
- Influences of Potential Barrier Scattering on the Thermoelectric Properties of Sintered n-Type PbTe with a Small Grain Size