TODA Yoshitsugu | Electrotechnical Laboratory, MITI
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概要
Electrotechnical Laboratory, MITI | 論文
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices
- Molecular Beam Epitaxial Growth and Properties of CuInSe_2