Iga Kenichi | Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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- Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japanの論文著者
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan | 論文
- $p$-Type Doping Characteristics of GaInNAs:Be Grown by Solid Source Molecular Beam Epitaxy
- Photoluminescence Characterization of InAs Quantum Dots on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition
- Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers
- Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers