Murayama Takashi | Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
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概要
- 同名の論文著者
- Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japanの論文著者
Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan | 論文
- 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
- Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage
- Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage
- Ultra-High Efficiency White Light Emitting Diodes
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen