KOHLER K. | Fraunhofer Institut fur Angewandte Festkorperphysik

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Fraunhofer Institut fur Angewandte Festkorperphysik | 論文

• Fabrication of High Breakdown Pseudomorphic Modulation Doped Field Effect Transistors Using Double Dry Etched Gate Recess Technology in Combination with E-Beam T-Gate Lithography
• E-Beam Ditrct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits : Microfabrication and Physics
• E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits

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