Asada Satoshi | Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan.

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• Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan.の論文著者

Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan. | 論文

• Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO
• Effects of strong electron–hole exchange and exciton–phonon interactions on the exciton binding energy of aluminum nitride

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