Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO

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概要

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• ScAlMgO<inf>4</inf>(SCAM) (0001) can be used for metalorganic vapor phase epitaxy (MOVPE) of GaN and lattice-matched In<inf>0.17</inf>Ga<inf>0.83</inf>N. GaN grown on SCAM(0001) via a low-temperature GaN buffer layer shows excellent structural quality, indicating that the GaN-SCAM interface is stable during MOVPE. For lattice-matched InGaN on SCAM(0001), a lattice-matched InGaN buffer layer grown at a lower temperature effectively improves the surface and luminescence uniformity. The grown InGaN is nearly unstrained and exhibits photoluminescence peaking at 505 nm at room temperature. These achievements indicate that In<inf>0.17</inf>Ga<inf>0.83</inf>N/SCAM lattice-matched templates may pave the way toward longer-wavelength light-emitting and -detecting devices using InGaN with higher In contents.

• Institute of Physicsの論文
• 2014-08-19

著者

• Ozaki Takuya

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan.

関連論文

• Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO

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