Watanabe Hiroki | Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japanの論文著者
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan | 論文
- In situ Observation of Initial Nucleation and Growth Processes in Supercritical Fluid Deposition of Copper
- Electrical Properties of Thick Epitaxial Silicon Films Deposited at High Rates and Low Temperatures by Mesoplasma Chemical Vapor Deposition
- Ab Initio Calculation of Capacitance of Semi-Infinite Jellium Electrodes with a Nanoscale Gap
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition
- Theoretical Analysis of Electron Standing Waves and Electric Field Intensity in the Vacuum Gap of Scanning Tunneling Microscopy