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YANG Beelyong | 論文著者
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Yang Beelyong
Department of Materials Science & Engineering, Kumoh National Institute of Technology, 188 Shinpyong-dong, Gumi-si, Gyeongbuk 730-701, Korea
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Yang Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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YANG Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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Yang Beelyong
Kumoh National Institute Of Technology Department Of Materials Science And Engineering
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YANG Beelyong
Kumoh National Institute of Technology, Department of Materials Science and Engineering
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Yang Beelyong
Kumoh National Institute of Technology, Department of Materials Science and Engineering, 188 Shinpyong-dong, Gumi-si, Kyongsangbuk-do, 730-701, Korea
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YANG Beelyong
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Yang Beelyong
New Device Team Memory R&d Division Hynix Semiconductor Inc.
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Yang Beelyong
New Device Team, Memory R&D Division, Hynix Semiconductor Inc.
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Yang Beelyong
New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea
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YANG Beelyong
New Device Team, Memory R&D Division, Hynix Semiconductor Inc.
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Yang Beelyong
School of Advanced Materials and Systems Engineering, Kumoh National Institute Technology (KIT), 1 Yangho-dong, Gumi, Gyeongbuk 730-701, Korea