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American Institute of Physics (AIP) | 論文
- Acceptor-related low-energy photoluminescence from boron-doped Si nanocrystals
- Long-wavelength emission from nitridized InAs quantum dots
- Fourier transformed photoreflectance characterization of interface electric fields in GaAs/GaInP heterojunction bipolar transistor wafers
- Effects of molecular orientation on surface-plasmon-coupled emission patterns
- Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells
- Enhanced optical properties of Si1-xGex alloy nanocrystals in a planar microcavity
- Photoluminescence from impurity codoped and compensated Si nanocrystals
- Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities
- Below bulk-band-gap photoluminescence at room temperature from heavily P- and B-doped Si nanocrystals
- X-ray diffraction of polymer under load at cryogenic temperature
- In situ observation of surface deformation of polymer films by atomic force microscopy
- Temperature dependence of optical anisotropy of birefringent porous silicon
- Anisotropic propagation of surface plasmon polaritons caused by oriented molecular overlayer
- Raman characterization of Ge distribution in individual Si1?xGex alloy nanowires
- Enhancement of upconversion luminescence of Er doped Al2O3 films by Ag island films
- Diffraction microscopy using 20 kV electron beam for multiwall carbon nanotubes
- Electron tomography of embedded semiconductor quantum dot
- Enhancement of ballistic efficiency due to source to channel heterojunction barrier in Si metal oxide semiconductor field effect transistors
- Finite-element analysis of quantum wires with arbitrary cross sections
- Investigation of electronic transport in carbon nanotubes using Green's-function method