Transport properties of field-effect transistors with thin films of C_<76> and its electronic structure
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概要
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The C_<76> field-effect transistor (FET) showed n-channel normally-off like behavior with n-channel field-effect mobility, μ_n, of 3.9 × 10^<-4> cm^2 V^<-1> s^<-1>, and the highest on-off ratio, 125, among higher fullerenes FETs. The carrier transport in the C_<76> FET followed a thermally-activated hopping transport model. The normally-off like properties of C_<76> FET could be reasonably explained based on the electronic structure of thin films determined from photoemission spectroscopy.
- Elsevierの論文
- 2007-11-26
Elsevier | 論文
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