Characteristics of Cell Latch and Leakage Current at Standby State in 6-T Low-Power Static Random Access Memory (SRAM) Device
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-15
著者
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Yang Won-suk
Srami Team Memory Division Samsung Electronics Co. Ltd.
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Seo Sang-hun
Srami Team Memory Division Samsung Electronics Co. Ltd.
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KIM Seug-Gyu
SRAMI Team, Memory Division, Samsung Electronics Co., Ltd.
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KIM Kyeong-Tae
SRAMI Team, Memory Division, Samsung Electronics Co., Ltd.
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Kim Kyeong-tae
Srami Team Memory Division Samsung Electronics Co. Ltd.