Efficient Incorporation of Mg in Solution Grown GaN Crystals

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概要

• 論文の詳細を見る

• Detailed spectrometry and optical spectroscopy studies carried out on GaN crystals grown in solution detect and identify Mg as the dominant shallow acceptor. Selective etching of crystals with higher Mg levels than that of the donor concentration background indicates that Mg acceptors incorporate preferentially in the N-polar face. Electrical transport measurements verified an efficient incorporation and activation of the Mg acceptors. These results suggest that this growth method has the potential to produce p-type doped epitaxial layers or p-type substrates characterized by high hole concentration and low defect density.

• 2013-11-25

著者

• Freitas Jr.

  Naval Research Laboratory, Washington, D.C. 20375, U.S.A.

• Feigelson Boris

  Naval Research Laboratory, Washington, D.C. 20375, U.S.A.

• Anderson Travis

  Naval Research Laboratory, Washington, D.C. 20375, U.S.A.

関連論文

• Efficient Incorporation of Mg in Solution Grown GaN Crystals

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