Spectral Sensitivity Tuning of Vertical InN Nanopyramid-Based Photodetectors
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概要
- 論文の詳細を見る
In this paper, we report on the fabrication of InN nanopyramid-based photodetectors operating within the telecommunication wavelength range. We found that the spectral sensitivity of individually addressable InN nanopyramids can be tuned within an interval of 1550--1750 nm since the band edge luminescence energy correlates with the structure size. According to this, we optimized the nanopatterning technique of SiO<inf>2</inf>/GaN/sapphire substrates as well as the selective area growth to precisely control the nanostructure dimensions. Furthermore, we developed a technological process to contact InN nanopyramids and to integrate them into a high-frequency device layout. Thus, InN nanopyramid-based photodetectors exhibit a low RC constant, low dark currents below 1 nA, as well as a high responsivity of about 0.2 A/W at a wavelength of 1.55 μm.
- The Japan Society of Applied Physicsの論文
- 2013-08-25
著者
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Mikulics Martin
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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Grützmacher Detlev
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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Winden Andreas
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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Hardtdegen Hilde
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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Haab Anna
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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- Spectral Sensitivity Tuning of Vertical InN Nanopyramid-Based Photodetectors