Surface Recombination Noise in InAs/GaSb Superlattice Photodiodes

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概要

• 論文の詳細を見る

• The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an InAs/GaSb superlattice photodetector at reverse negative bias. The additional noise identified appears at surface activation energies below 60 meV and is inversely proportional to the reverse bias. In order to satisfactorily explain the experimental data, we hereby propose the existence of a surface recombination noise that is a function of both the frequency and bias. The calculated noise characteristics indeed show good agreement with the experimental data.

• The Japan Society of Applied Physicsの論文
• 2013-03-25

著者

• Turan Rasit

  Department of Physics, Middle East Technical University (METU), 06531 Ankara, Turkey

• Tansel Tunay

  Department of Physics, Middle East Technical University (METU), 06531 Ankara, Turkey

• Kutluer Kutlu

  Department of Physics, Middle East Technical University (METU), 06531 Ankara, Turkey

• Muti Abdullah

  Department of Physics, Advanced Research Laboratories, Bilkent University, 06800 Ankara, Turkey

• Salihoglu Ömer

  Department of Physics, Advanced Research Laboratories, Bilkent University, 06800 Ankara, Turkey

• Aydinli Atila

  Department of Physics, Advanced Research Laboratories, Bilkent University, 06800 Ankara, Turkey

関連論文

• Surface Recombination Noise in InAs/GaSb Superlattice Photodiodes
• Surface Recombination Noise in InAs/GaSb Superlattice Photodiodes

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