A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary MetalOxideSemiconductor Device Integration Applications
スポンサーリンク
概要
著者
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Choi Changhwan
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea
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CHOI MOON
Division of Endocrinology and Metabolism, Department of Internal Medicine, College of Medicine, Hallym University
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Heo Seung
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea
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Yoo Dongjun
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea
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Kim Dohyung
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea
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Chung Chulwon
WCU Department of Energy Engineering, Hanyang University, Seoul 133-791, Republic of Korea
関連論文
- A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary MetalOxideSemiconductor Device Integration Applications
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