Optical Improvement of GaN-Based Light Emitting Diodes by Interfacial Si Treatment in InGaN/GaN Quantum Well Structure (Special Issue : Advanced Electromaterials)
スポンサーリンク
概要
著者
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Park Sangjun
Optoelectronic Materials and Devices Laboratory, Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793, Korea
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Lee Sangwon
Optoelectronic Materials and Devices Laboratory, Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793, Korea
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Yoo Hongjae
Seoul Optodevice Co., Ltd., Ansan, Gyeonggi 425-851, Korea
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Choi Joowon
Seoul Optodevice Co., Ltd., Ansan, Gyeonggi 425-851, Korea
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Lee Sung-Nam
Optoelectronic Materials and Devices Laboratory, Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793, Korea