In situ Probe of GaN Film Surfaces under Plasma Conditions by Photoluminescence Technique
スポンサーリンク
概要
著者
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Sugai Hideo
College Of Engineering Chubu University
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Zhang Gao-hui
Department Of Physics China Jiliang University
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Nakano Yoshitaka
College Of Engineering Chubu University
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Chen Miao-gen
College Of Engineering Chubu University
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Nakamura Keiji
College Of Engineering Chubu University
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Nakano Yoshitaka
College Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487-8501, Japan
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Nakamura Keiji
College Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487-8501, Japan
関連論文
- Growth of Single-Crystalline Nanorods in Atmospheric Plasma
- Observation of Optical Fluorescence of GaN Thin Films in an Inductively-Coupled Plasma Containing High Energy Electrons
- In situ Probe of GaN Film Surfaces under Plasma Conditions by Photoluminescence Technique
- Temperature Dependence of Coercivity Behavior in Fe Films on Fractal Rough Ceramics Surfaces
- In situ Probe of GaN Film Surfaces under Plasma Conditions by Photoluminescence Technique