Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on 4H-SiC C-Face

スポンサーリンク

概要

• 論文の詳細を見る

著者

• Fukuda Kenji

  Advanced Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology

関連論文

• Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on 4H-SiC C-Face
• Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal-Oxide-Semiconductor Field-Effect Transistors

スポンサーリンク