Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH Passivated InGaAs N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))

スポンサーリンク

概要

• 論文の詳細を見る

著者

• Suleiman Sumarlina

  Department of Electrical and Computer Engineering, National University of Singapore, Singapore 1175761

• Lee Sungjoo

  SKKU Advanced Institute of Nano Technology (SAINT) and School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea

関連論文

• Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH Passivated InGaAs N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))

スポンサーリンク