Capacitance-voltage characterization of La2O3 metal-oxide-semiconductor structures on In0.53Ga0.47As substrate with different surface treatment methods (Special issue: Dielectric thin films for future electron devices: science and technology)
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- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics | 論文
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