三次元積層構造を有する完全埋込型人工網膜の開発
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概要
論文 | ランダム
- Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film Transistor
- Meyer–Neldel Rule and Extraction of Density of States in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor by Considering Surface Band Bending
- Electrical Properties of Yttrium–Indium–Zinc-Oxide Thin Film Transistors Fabricated Using the Sol–Gel Process and Various Yttrium Compositions
- Effects of Excimer Laser Annealing on InGaZnO4 Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon
- Optical and Structural Properties of Ion-implanted InGaZnO Thin Films Studied with Spectroscopic Ellipsometry and Transmission Electron Microscopy