Nanoscale wet etching of physical-vapor-deposited titanium nitride and its application to sub-30-nm-gate-length fin-type double-gate metal-oxide-semiconductor field-effect transistor fabrication (Special issue: Microprocesses and nanotechnology)
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- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics | 論文
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