Improvement of the light extraction efficiency in n-ZnO:Ga/p-Si heterojunction light emitting diodes by a SiO2 current-blocking layer (Special issue: Recent advances in dry process and related technologies)
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- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics | 論文
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