Reduction of leakage currents in bottom-gate N-channel metal-induced crystallization through a cap layer polycrystalline silicon thin-film transistors by applying off-bias stress (Special issue: Recent advances in dry process and related technologies)
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- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics | 論文
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