Pt-germanide formed by laser annealing and its application for Schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack (Special issue: Solid state devices and materials)
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics | 論文
- Modeling and Characterization of Piezoelectric Fibers with Metal Core
- New advanced fabrication technique for millimeter-wave planar components based on fluororesin substrates using graft polymerization
- Novel Characteristics of Multifunctional Fluid Filters Fabricated by High-Energy Synchrotron Radiation Lithography
- A New Micro-Chemical Reactor Using Fluid Filters for Vertical Fluid Flow Operation
- Construction of Neoclassical Transport Database for Large Helical Device Plasma Applying Neural Network Method