Tinv scaling and gate leakage reduction for n-type metal oxide semiconductor field effect transistor with HfSi[x]/HfO2 gate stack by interfacial layer formation using ozone-water-last treatment (Special issue: Solid state devices and materials)
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- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics | 論文
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