Passivation effects of 100nm In0.4AlAs/In0.35GaAs metamorphic high-electron-mobility transistors with a silicon nitride layer by remote plasma-enhanced chemical vapor deposition (Special issue: Solid state devices and materials)
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- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics | 論文
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