Impacts of low-pressure chemical vapor deposition-SiN capping layer and lateral distribution of interface traps on hot-carrier stress of n-channel metal-oxide-semiconductor field-effect-transistors (Special issue: Solid state devices and materials)
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- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics | 論文
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