InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3μm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy
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- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics | 論文
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