森鴎外と島村抱月
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概要
論文 | ランダム
- Ferroelectric-gate thin-film transistor fabricated by total solution deposition process (Special issue: Solid state devices and materials)
- Experimental study of physical-vapor-deposited titanium nitride gate with An n[+]-polycrystalline silicon capping layer and its application to 20nm fin-type double-gate metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices
- Low gate-induced drain leakage and its physical origins in Si nanowire transistors (Special issue: Solid state devices and materials)
- Dual-material gate approach to suppression of random-dopant-induced characteristic fluctuation in 16nm metal-oxide-semiconductor field-effect-transistor devices (Special issue: Solid state devices and materials)
- In situ formation of HfN/HfSiON gate stacks with 0.5nm equivalent oxide thickness utilizing electron cyclotron resonance plasma sputtering on three-dimensional Si structures (Special issue: Solid state devices and materials)