提言 「学力低下論」を読み解く--教育内容三割削減の問題点 (特集 「三割削減」で問われる学力向上対策)
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概要
論文 | ランダム
- Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)
- Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching
- Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode
- Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition
- Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices