Superior bipolar resistive switching behaviors of solution-processed HfAlO

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概要

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• We report on the bipolar resistive switching behavior and uniform cumulative distribution of set/reset voltage observed from the resistive random access memory (ReRAM) device based on a solution-processed HfAlO<inf>x</inf>thin film. The HfAlO<inf>x</inf>thin film was spin-coated from a mixture of HfO<inf>x</inf>and AlO<inf>x</inf>solutions at [Formula: see text] ratio. The dominant conduction mechanism of a solution-processed HfAlO<inf>x</inf>thin film is found to be the ohmic behavior in the low-resistance state (LRS) and high-resistance state (HRS) in the low-voltage region, whereas the Poole–Frenkel emission is dominant in the HRS in the high-voltage region. Outstanding reliability in terms of endurance and retention characteristics was achieved. The solution-processed HfAlO<inf>x</inf>thin film can be a promising candidate for the application in ReRAM devices with glass or flexible substrates.

• Institute of Physicsの論文
• 2014-07-18

著者

• Jang Ki-Hyun

  Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea.

関連論文

• Superior bipolar resistive switching behaviors of solution-processed HfAlO

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