Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations

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概要

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• The effect of the flux ratio of N atoms to Ga atoms on the radial/axial growth of GaN nanowires during molecular-beam epitaxy has been investigated by molecular dynamics simulations. By studying adatoms on a surface during the growth of GaN nanowires, we explore the underlying mechanisms and find that both a preferable adsorption surface for N and Ga adatoms and the desorption of N adatoms play a key role for such axial/radial growth. These observations on the atomic scale are crucial for understanding the self-induced growth of GaN nanowires in general as well as for achieving their desired morphology under different growth conditions.

• Institute of Physicsの論文
• 2014-07-09

著者

• Gong Xiaojing

  Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.

関連論文

• Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations

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