High-quality gate oxide formed at 150 °C for flexible electronics

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概要

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• This study describes the low temperature process to form the gate oxide of MOSFETs using a SiO nano-powder and post UV oxidation. The high-quality SiO<inf>2</inf>gate oxide was successfully formed on a silicon substrate by vacuum evaporation of the SiO nano-powder followed by the post UV oxidation in steam at 200 °C. However, further lowering of the oxidation temperature to 150 °C degraded the insulating property and increased the interface trap density. In order to improve the SiO<inf>2</inf>/Si interface quality, the Si surface was irradiated by vacuum UV (VUV) using a Xe excimer lamp before evaporation of the SiO nano-powder. This substrate treatment has substantially improved the SiO<inf>2</inf>/Si interface quality. The physical mechanisms of the VUV and UV oxidation are discussed in order to understand the low-temperature formation of the SiO<inf>2</inf>.

• Institute of Physicsの論文
• 2014-07-23

著者

• Iijima Yasuhiro

  Graduate School of Informatics and Engineering, The University of Electro-Communication, Chofu, Tokyo 182-8585, Japan.

関連論文

• High-quality gate oxide formed at 150 °C for flexible electronics

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