Piezoelectric properties of (100) orientated BiFeO

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概要

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• To improve the piezoelectric properties of sol–gel-derived BiFeO<inf>3</inf>films for MEMS application, (100) oriented films were prepared by using LaNiO<inf>3</inf>bottom electrodes, which have preferential (100) orientation on Si substrates. The microstructure of the films crystalized at 450 and 500 °C was a layered granular structure and that crystalized at 550 and 600 °C changed to a columnar structure. The increase in the domain size with increasing the annealing temperature was also observed by piezoelectric force microscopy. Most of the film characteristics including the dielectric constant, remanent polarization, and d<inf>33,AFM</inf>coefficient were enhanced gradually with increasing annealing temperature. In contrast, the e<inf>31,f</inf>coefficient showed a much larger increase than the others, which suggests that the e<inf>31,f</inf>coefficient is strongly influenced by the domain size. The largest e<inf>31,f</inf>coefficient of the (100) BiFeO<inf>3</inf>films was −4.1 C/m², which is about 4 times larger than that of the polycrystalline films.

• Institute of Physicsの論文
• 2014-07-14

著者

• Kariya Kento

  Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan.

関連論文

• Piezoelectric properties of (100) orientated BiFeO

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