Effects of growth interruption, As and Ga fluxes, and nitrogen plasma irradiation on the molecular beam epitaxial growth of GaAs/GaAsN core–shell nanowires on Si(111)

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-06-02

著者

• Ahn Namsoo

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.

関連論文

• Effects of growth interruption, As and Ga fluxes, and nitrogen plasma irradiation on the molecular beam epitaxial growth of GaAs/GaAsN core–shell nanowires on Si(111)

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