Quantum confinement effects in doped two-dimensional Si layers: Novel device design for two-dimensional pn-junction structures
スポンサーリンク
概要
- 論文の詳細を見る
- Institute of Physicsの論文
- 2014-02-13
著者
関連論文
- New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal–Oxide–Semiconductor Transistors: Relaxation Technique of Strained Substrates and Design of Sub-10 nm Devices
- Experimental Study on Surface-Orientation/Strain Dependence of Phonon Confinement Effects and Band Structure Modulation in Two-Dimensional Si Layers
- Quantum confinement effects in doped two-dimensional Si layers: Novel device design for two-dimensional pn-junction structures
- Crystal direction dependence of quantum confinement effects of two-dimensional Si layers fabricated on silicon-on-quartz substrates: modulation of phonon spectra and energy band structures