Suppressing Al memory effect on CVD growth of 4H-SiC epilayers by adding hydrogen chloride gas

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-02-21

著者

• Ji Shi-yang

  Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan.

関連論文

• Suppressing Al memory effect on CVD growth of 4H-SiC epilayers by adding hydrogen chloride gas

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