Novel application of MgF

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概要

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• We present high-quality a-SiO<inf>x</inf>:H solar cells with a very thin i-layer of 100 nm fabricated at a low temperature of 100 °C. To boost the photocurrent with such a thin absorber, we suggested the application of a low-index MgF<inf>2</inf>buffer at the n-type nanocrystalline silicon oxide (n-nc-SiO<inf>x</inf>:H)/Ag nanotextured interface to suppress the absorption loss at the Ag back contact. The introduction of MgF<inf>2</inf>of only a few nanometers (∼4 nm) thickness enhanced the reflection at the n-nc-SiO<inf>x</inf>:H/Ag interface, which resulted in the reinforcement of the short-circuit current by about 7.3% from 9.60 to 10.30 mA/cm²while almost maintaining V<inf>oc</inf>and FF. We demonstrated the efficiency improvement of up to 7.66% by MgF<inf>2</inf>at the back contact.

• Institute of Physicsの論文
• 2014-07-09

著者

• Kang Dong-Won

  Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Korea

• Kang Dong-Won

  Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan.

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• Novel application of MgF

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